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| BFP 193 NPN Silicon RF Transistor * For low noise, high-gain amplifiers up to 2GHz * For linear broadband amplifiers * fT = 8GHz F = 1.3dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFP 193 RCs Q62702-F1282 1=C 2=E 3=B 4=E Package SOT-143 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 12 20 20 2 80 10 mW 580 150 - 65 ... + 150 - 65 ... + 150 135 C mA Unit V VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg 1) TS 72 C Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point RthJS K/W 1) TS is measured on the collector lead at the soldering point to the pcb. Semiconductor Group 1 Dec-13-1996 BFP 193 Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 12 100 - V A 100 nA 100 A 1 50 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 30 mA, VCE = 8 V Semiconductor Group 2 Dec-13-1996 BFP 193 Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol min. AC Characteristics Transition frequency Values typ. max. Unit fT 6 8 0.6 0.25 1.8 - GHz pF 0.9 dB 1.3 2.1 - IC = 50 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance Ccb Cce - VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance Ceb - VEB = 0.5 V, f = 1 MHz Noise figure F IC = 10 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz f = 1.8 GHz Power gain 2) Gma IC = 30 mA, VCE = 8 V, ZS = ZSopt ZL = ZLopt f = 900 MHz f = 1.8 GHz Transducer gain |S21e|2 14.5 8.5 17.5 11.5 - IC = 30 mA, VCE = 8 V, ZS =ZL= 50 f = 900 MHz f = 1.8 GHz 2) Gma = |S21/S12| (k-(k2-1)1/2) Semiconductor Group 3 Dec-13-1996 BFP 193 SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 0.2738 fA VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 24 1.935 3.8742 0.94371 1.8368 1.1824 18.828 0.96893 1.1828 1.0037 0 3 V V fF ps mA V ns - BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = 125 0.26949 14.267 1 0.76534 0.70276 0.69477 0 0.30002 0 0 0.72063 A V deg fF - NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 0.95341 10.627 1.4289 0.91763 0.11938 0.48654 0.8 935.03 0.75 1.11 300 fA mA V fF V eV K 0.037925 A 0.037409 fA 0.053563 - All parameters are ready to use, no scalling is necessary. Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut fur Mobil-und Satellitenfunktechnik (IMST) (c) 1996 SIEMENS AG Package Equivalent Circuit: LBI = LBO = LEI = LEO = LCI = LCO = CBE = CCB = CCE = 0.84 0.65 0.31 0.14 0.07 0.42 145 19 281 nH nH nH nH nH nH fF fF fF Valid up to 6 GHz For examples and ready to use parameters please contact your local Siemens distributor or sales office to obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm Semiconductor Group 4 Dec-13-1996 BFP 193 Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy 600 mW 500 Ptot 450 400 350 300 250 200 150 100 50 0 0 20 40 60 80 100 120 C 150 TA ,TS TS TA Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load Ptotmax/PtotDC = f (tp) 10 3 10 2 K/W RthJS 10 2 Ptotmax/PtotDC D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 s 10 IC -1 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 Semiconductor Group 5 Dec-13-1996 BFP 193 Collector-base capacitance Ccb = f (VCB) VBE = vbe = 0, f = 1MHz Transition frequency fT = f (IC) VCE = Parameter 1.0 pF 10 GHz Ccb 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 4 8 12 16 V VR 22 f 8 10V 7 6 5 4 3 2 1 0 0 10 20 30 40 50 60 70 mA 85 IC 1V 0.7V 5V 3V 2V Power Gain Gma, Gms = f(IC) f = 0.9GHz VCE = Parameter 20 Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 13 dB dB 11 10V 5V 3V 2V G 10V 16 5V 3V G 10 9 8 14 2V 7 6 12 5 10 4 1V 3 8 0.7V 6 0 10 20 30 40 50 60 70 mA 85 IC 2 1 0 0 10 20 30 40 50 60 70 mA 85 IC 0.7V 1V Semiconductor Group 6 Dec-13-1996 BFP 193 Power Gain Gma, Gms = f(VCE):_____ |S21 |2 = f(VCE):--------- Intermodulation Intercept Point IP3=f(IC) (3rd order, Output, ZS=ZL=50) f = Parameter 20 VCE = Parameter, f = 900MHz 34 IC=30mA dB 0.9GHz dBm 8V G 16 14 12 1.8GHz 10 1.8GHz 8 0.9GHz IP3 30 28 26 24 22 20 2V 3V 5V 6 4 2 0 0 2 4 6 8 V 12 18 16 14 12 0 10 20 30 40 50 60 mA IC 80 1V V CE Power Gain Gma, Gms = f(f) VCE = Parameter 34 dB Power Gain |S21|2= f(f) VCE = Parameter 32 IC=30mA dB IC=30mA G 28 24 20 16 12 8 4 0 0.0 S21 26 22 18 14 10 6 10V 2 -2 0.0 1V 0.7V 0.5 1.0 1.5 2.0 2.5 GHz f 3.5 10V 1V 0.7V 0.5 1.0 1.5 2.0 2.5 GHz f 3.5 Semiconductor Group 7 Dec-13-1996 |
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